Power electronics and converters utilizing them made a head start when the first device the Silicon Controlled Rectifier was proposed by Bell Labs and commercially produced by General Electric in the earlier fifties. The Mercury Arc Rectifiers were well in use by that time and the robust and compact SCR first started replacing it in the rectifiers and cycloconverters.
The necessity arose of extending the application of the SCR beyond the line-commutated mode of action, which called for external measures to circumvent its turn-off incapability via its control terminals. Various turn-off schemes were proposed and their classification was suggested but it became increasingly obvious that a device with turn-off capability was desirable, which would permit it a wider application. The turn-off networks and aids were impractical at higher powers.
The Bipolar transistor, which had by the sixties been developed to handle a few tens of amperes and block a few hundred volts, arrived as the first competitor to the SCR. It is superior to the SCR in its turn-off capability, which could be exercised via its control terminals. This permitted the replacement of the SCR in all forced-commutated inverters and choppers. However, the gain (power) of the SCR is a few decades superior to that of the Bipolar transistor and the high base currents required to switch the Bipolar spawned the Darlington. Three or more stage Darlingtons are available as a single chip complete with accessories for its convenient drive. Higher operating frequencies were obtainable with a discrete Bipolars compared to the 'fast' inverter-grade SCRs permitting reduction of filter components. But the Darlington's operating frequency had to be reduced to permit a sequential turn-off of the drivers and the main transistor.
Further, the incapability of the Bipolar to block reverse voltages restricted its use.The Power MOSFET burst into the scene commercially near the end seventies. This device also represents the first successful marriage between modern integrated circuit and discrete power semiconductor manufacturing technologies. Its voltage drive capability – giving it again a higher gain, the ease of its paralleling and most importantly the much higher operating frequencies reaching upto a few MHz saw it replacing the Bipolar also at the sub-10 KW range mainly for SMPS type of applications.
Extension of VLSI manufacturing facilities for the MOSFET reduced its price vis-à-vis the Bipolar also. However, being a majority carrier device its on-state voltage is dictated by the RDS(ON) of the device, which in turn is proportional to about V2.3DSS rating of the MOSFET. Consequently, high-voltage MOSFETS are not commercially viable.
Improvements were being tried out on the SCR regarding its turn-off capability mostly by reducing the turn-on gain. Different versions of the Gate-turn-off device, the Gate turn-off Thyristor (GTO), were proposed by various manufacturers - each advocating their own symbol for the device. The requirement for an extremely high turn-off control current via the gate and the comparatively higher cost of the device restricted its application only to inverters rated above a few hundred KVA.The lookout for a more efficient, cheap, fast and robust turn-off-able device proceeded in different directions with MOS drives for both the basic thysistor and the Bipolar.
The Insulated Gate Bipolar Transistor (IGBT) – basically a MOSFET driven Bipolar from its terminal characteristics has been a successful proposition with devices being made available at about 4 KV and 4 KA. Its switching frequency of about 25 KHz and ease of connection and drive saw it totally removing the Bipolar from practically all applications. Industrially, only the MOSFET has been able to continue in the sub – 10 KVA range primarily because of its high switching frequency.
The IGBT has also pushed up the GTO to applications above 2-5 MVA.Subsequent developments in converter topologies – especially the three-level inverter permitted use of the IGBT in converters of 5 MVA range. However at ratings above that the GTO based converters had some space. Only SCR based converters are possible at the highest range where line-commutated or load-commutated converters were the only solution. The surge current, the peak repetition voltage and I2t ratings are applicable only to the thyristors making them more robust, specially thermally, than the transistors of all varieties.
Presently there are few hybrid devices and Intelligent Power Modules (IPM) are marketed by some manufacturers. The IPMs have already gathered wide acceptance. The 4500 V, 1200 A IEGT (injection-enhanced gate transistor) or the 6000 V, 3500 A IGCT (Integrated Gate Commutated Thyristors) which are promising at the higher power ranges. However these new devices must prove themselves before they are accepted by the industry at large.
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