The Insulated Gate Bipolar Transistor (IGBT)

IGBT is a voltage controlled four-layer device with the advantages of the MOSFET driver and the Bipolar Main terminal. IGBTs can be classified as punch-through (PT) and non-punch-through (NPT) structures. In the punch-through IGBT, a better trade-off between the forward voltage drop and turn-off time can be achieved. Punch-through IGBTs are available up to about 1200 V. NPT IGBTs of up to about 4 KV have been reported in literature and they are more robust than PT IGBTs particularly under short circuit conditions. However they have a higher forward voltage drop than the PT IGBTs. Its switching times can be controlled by suitably shaping the drive signal. This gives the IGBT a number of advantages: it does not require protective circuits, it can be connected in parallel without difficulty, and series connection is possible without dv/dt snubbers. The IGBT is presently one of the most popular device in view of its wide ratings, switching speed of about 100 KHz a easy voltage drive and a square Safe Operating Area devoid of a Second Breakdown region.